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P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 60 Volt V DS
* R DS(on) =5 ?
ZVP2106A
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T amb =25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T amb =25°C
Operating and Storage Temperature Range
SYMBOL
V DS
I D
I DM
V GS
P tot
T j :T stg
VALUE
-60
-280
-4
± 20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Drain-Source Breakdown
BV DSS
-60
V
I D =-1mA, V GS =0V
Voltage
Gate-Source Threshold
V GS(th)
-1.5
-3.5
V
ID=-1mA, V DS = V GS
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
I GSS
I DSS
I D(on)
-1
20
-0.5
-100
nA
μ A
μ A
A
V GS = ± 20V, V DS =0V
V DS =-60 V, V GS =0
V DS =-48 V, V GS =0V, T=125°C (2)
V DS =-18 V, V GS =-10V
Static Drain-Source On-State R DS(on)
5
?
V GS =-10V,I D =-500mA
Resistance (1)
Forward Transconductance
g fs
150
mS
V DS =-18V,I D =-500mA
(1)(2)
Input Capacitance (2)
C iss
100
pF
Common Source Output
C oss
60
pF
V DS =-18V, V GS =0V, f=1MHz
Capacitance (2)
Reverse Transfer
C rss
20
pF
Capacitance (2)
Turn-On Delay Time (2)(3)
t d(on)
7
ns
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
t r
t d(off)
t f
15
12
15
ns
ns
ns
V DD ≈ -18V, I D =-500mA
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2%
(2) Sample test.
3-417
Switching times measured with 50 ? source impedance and <5ns rise time on a pulse generator
(
3
)
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